Effects of rapid thermal annealing on optical properties of p-doped and undoped InAs/InGaAs dots-in-a-well structures
作者： Q. Cao , S. F. Yoon , C. Y. Liu , C. Z. Tong
DOI: 10.1063/1.2963689
关键词:
摘要: Postgrowth rapid thermal annealing was used to investigate the intermixing and structural changes in p-doped undoped InAs/In0.1Ga0.9As dots-in-a-well (DWELL) structures grown by molecular beam epitaxy. Interdiffusion of In Ga atoms caused proven from photoluminescence (PL) measurements, where blueshifts energy peaks were observed. The results show that quantum dot (QD) are more resistant with higher onset, reason is explained as suppressed diffusion resulted Be dopant. Rapid quenching integrated PL intensity at high temperature observed both DWELL QDs. Good agreement obtained fitting profile using two nonradiative recombination mechanisms, resulting activation energies correspond loss carriers centers.
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