Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing
作者： Young Min Park , Young Ju Park , Kwang Moo Kim , Jin Dong Song , Jung II Lee
DOI: 10.1063/1.1805191
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摘要: Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using alternately supplying InAs GaAs sources. In case of as-grown sample, which a metastable quantum due intentional deficit source materials, it is found that well (QW) coexists with premature dots (QDs), intermediate layer exists between QW QDs. Through RTA process at 600 800°C for 30s, changes into normal DWELL composed QDs as result intermixing layer.
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