Probing the lateral composition profile of self-assembled islands.
作者： U. Denker , M. Stoffel , O. G. Schmidt
DOI: 10.1103/PHYSREVLETT.90.196102
关键词: Strain energy 、 Optoelectronics 、 Substrate surface 、 Quantum dot 、 Island growth 、 Nanotechnology 、 Self assembled 、 Etching (microfabrication) 、 Material system 、 Materials science 、 Heterojunction
摘要: We apply a selective etching procedure to probe the lateral composition profile of self-assembled SiGe pyramids on Si(001) substrate surface. find that consist highly Si intermixed corners, whereas edges, apex, and center remain Ge rich. Our results cannot be explained by existing growth models minimize strain energy. use model includes surface interdiffusion during island growth, underlining paramount importance processes formation quantum dot heterostructures in many different material systems.
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