Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance
作者： Qu Yu-Hua , Jiang De-Sheng , Wu Dong-Hai , Niu Zhi-Chuan , Sun Zheng
DOI: 10.1088/0256-307X/22/8/073
关键词:
摘要: Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples incorporation and pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained the surfactant effects during growth QW systems. An abnormal S-shaped temperature dependence PL peak position found in In0.42Ga0.58As/GaAs triple QWs sample pre-deposition. By investigating transmission electron microscope images time-resolved spectra, it that originates from exciton localization effect brought Sb-rich clusters on interface.
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