Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process
作者： Z. Y. Zhang , R. A. Hogg , B. Xu , P. Jin , Z. G. Wang
DOI: 10.1364/OL.33.001210
关键词:
摘要: The first demonstration, to our knowledge, of the creation ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. device exhibits a 3 dB emission bandwidth 146 nm centered at 984 mm with cw output power as high 15 mW room temperature corresponding an extremely small coherence length 6.6 mu m. (C) 2008 Optical Society America.
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