Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements
作者： Patrick Fiorenza , Giuseppe Greco , Emanuela Schilirò , Ferdinando Iucolano , Raffaella Lo Nigro
关键词: Oxide 、 Algan gan 、 Gate capacitance 、 Activation energy 、 Condensed matter physics 、 Hysteresis 、 Transient (oscillation) 、 Materials science 、 Heterojunction 、 Arrhenius equation
摘要: This letter presents time-dependent gate-capacitance transient measurements (C?t) to determine the oxide trapped charges (N ot) in Al2O3 films deposited on recessed AlGaN/GaN heterostructures. The C?t transients acquired at different temperatures under strong accumulation allowed accurately monitor gradual electron trapping, while hindering re-emission by fast traps that may affect conventional C?V hysteresis measurements. Using this method, an increase of N ot from 2 6 × 1012 cm?2 was estimated between 25 and 150 ?C. trapping is ruled Arrhenius dependence with activation energy 0.12 eV which associated points defects present films.
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