Structural studies of room-temperature RF magnetron sputtered ZnO films under different RF powered conditions
作者： Hyoun Woo Kim , Nam Ho Kim
DOI: 10.1016/S0921-5107(03)00281-2
关键词: Radio frequency 、 Substrate (electronics) 、 Analytical chemistry 、 Root mean square 、 Cavity magnetron 、 RF power amplifier 、 Materials science 、 Thin film 、 Wurtzite crystal structure 、 Sputter deposition
摘要: Abstract We have deposited the ZnO thin films on Si(0 0 1) substrate at room temperature by RF magnetron sputtering method. demonstrated that radio frequency (RF) plasma power can dramatically affect structural properties of films. Under optimized condition 150 W, a c -axis-oriented wurtzite structured film with X-ray diffraction (XRD) full-width half-maximum (FWHM) 0.21° and atomic force microscopy (AFM) root mean square (RMS) values
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