Apparatus for controlling etch rate when using consumable electrodes during plasma etching
作者： Yuan-ko Hwang
DOI:
关键词: Nanotechnology 、 Optoelectronics 、 Semiconductor 、 Electrode 、 Process control 、 Materials science 、 Reactive-ion etching 、 Pressure measurement 、 Dry etching 、 Etching (microfabrication) 、 Plasma etching
摘要: A method and apparatus to improve process control during plasma etching of semiconductor substrates. Improvements are directed towards controlling the rate when using consumable electrodes. Consumable electrode materials used increase selectivity in certain processes as via. contact. or SOG etch. material has a significant effect on processing time due changing gap dimension between This invention teaches how adjust for variables by feedback from two strategically placed pressure manometers.
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