A semiconductor device featuring an arched structure strained semiconductor layer
作者： Voon-Yew Thean , Ted R. White , Lubomir Cergel , Peter Wennekers , Oliver G. Schmidt
DOI:
关键词: Dielectric layer 、 Point location 、 Semiconductor device 、 Layer (electronics) 、 Optoelectronics 、 Current (fluid) 、 Communication channel 、 Electrode 、 Materials science 、 Electrical engineering 、 Semiconductor
摘要: A semiconductor device includes a mechanically strained channel, wherein the channel comprises of single crystalline structure layer having non-linear geometry, geometry including portion an arch shape. The further dielectric layer, first is disposed overlying point location within and second proximate to outside location. Ih addition, gate for controlling current flow through between handling electrodes that are coupled channel.
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