Pre-gate, source/drain strain layer formation
作者： Viorel C. Ontalus , Keith H. Tabakman , Judson R. Holt
DOI:
关键词:
摘要: A method produces a transistor. The forms strain-producing layer on base and then removes at least one portion of the to create opening in layer. This leaves first second portions substrate. comprise source drain stressor regions grows channel region from layer, gate insulator region, conductor insulator.
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