Dislocation stress memorization technique (DSMT) on epitaxial channel devices

摘要: The present disclosure relates to a transistor device having epitaxial source and drain regions with dislocation stress memorization (DSM) that provide an channel region, associated method of formation. has stack disposed over semiconductor substrate, gate structure the stack. A region extends below between located on opposing sides structure. First second have stressed lattice generates within region. first DSM respectively extend from location Using improves performance.