Extrinsic interface formation of HfO2 and Al2O3∕GeOx gate stacks on Ge (100) substrates
作者： H. Seo , F. Bellenger , K. B. Chung , M. Houssa , M. Meuris
DOI: 10.1063/1.3204026
关键词: Materials science 、 Passivation 、 Optoelectronics 、 Ellipsometry 、 Germanate 、 Charge density 、 Germanium 、 Band gap 、 Dielectric 、 Analytical chemistry 、 Layer (electronics)
摘要: The extrinsic interfaces present at the HfO2∕GeOx∕Ge and Al2O3∕GeOx∕Ge gate stacks are investigated. effective trapped charge density, estimated from hysteresis in capacitance-voltage characteristics, is higher for HfO2 than Al2O3, implying qualitatively different trapping sources each dielectric. Spectroscopic ellipsometry medium energy ion scattering measurements reveal that deposition induces formation of a thicker germanate (intermixed) layer HfO2∕GeOx interface, where nonstoichiometric Ge-rich GeOx having significantly low bandgap (∼1.8eV) present. In contrast, Al2O3 leads to an abrupt thinner O-rich interfacial without phase. proposed band alignment indicates arises significant potential well trapping, while Al2O3∕GeOx responsible relatively lower well. combined results strongly suggest control ...
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