Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation
作者： B. Kaczer , B. De Jaeger , G. Nicholas , K. Martens , R. Degraeve
DOI: 10.1016/J.MEE.2007.04.100
关键词:
摘要: Field-effect transistors with metal gate and HfO"2 dielectric on silicon-passivated germanium substrate are studied. Capacitance-Voltage characteristics show lower capacitance at negative voltages, irrespective of the device channel polarity. Possible mechanisms for this asymmetry discussed. Reliability metal/high-k stack sub-micron p-channel is evaluated. Time-dependent breakdown analysis indicates comparable gate-stack quality silicon substrates.
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