Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
作者： Ook Sang Yoo , Jungwoo Oh , Kyung Seok Min , Chang Yong Kang , B.H. Lee
DOI: 10.1016/J.MEE.2008.04.024
关键词:
摘要: The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with cap shows lower subthreshold slope (SS), higher transconductance (G"m) enhanced drive current. In addition, threshold voltage shift G"m","m"a"x degradation are observed during NBTI stress. primary reason these is attributed to improved interface quality at high-k dielectric/substrate interface. Charge pumping was used verify presence density states in pMOSFETs cap.
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