Ge-channel p-MOSFETs with ZrO2 gate dielectrics
作者： S.K. Mandal , S. Chakraborty , C.K. Maiti
DOI: 10.1016/J.MEE.2005.03.008
关键词:
摘要: Germanium MOS capacitors with a thin high-k (ZrO"2) dielectric (EOT 2.2nm) were fabricated on epitaxial strained-Ge grown relaxed-SiGe substrates. Strained-Ge material parameters extracted from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of used in simulation channel p-MOSFETs gate dielectric. The simulated devices exhibited sub-100mV/decade subthreshold voltage swing low leakage.
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