Modeling and simulation of long-wave infrared InAs/GaSb strained layer superlattice photodiodes with different passivants
作者： Koushik Banerjee , Jun Huang , Siddhartha Ghosh
DOI: 10.1016/J.INFRARED.2011.08.003
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摘要: Abstract Current–voltage characteristics of long-wave infrared (LWIR) InAs/GaSb strained layer superlattice photodiodes (cut-off wavelength ∼10 μm), passivated with different surface passivants, have been modeled and simulated using ATLAS software from SILVACO. The results are fitted to previous experimental obtained on unpassivated devices those by silicon-dioxide (SiO 2 ), silicon nitride (Si x N y ) zinc sulfide (ZnS). Surface parameters in terms recombination velocity, shunt resistance interface trap density extracted for passivants. performance diode is solely dominated a leakage path value 0.56 Ω-cm . Extracted electron hole velocities values 10 5 cm/s 7 unpassivated, 3 Si ZnS devices. Interface follows similar trend 15 cm −2 , 8.5 × 10 14 respectively. suitability limitations the simulation tool discussed.
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