Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
作者： Dmitry Donetsky , Stefan P. Svensson , Leonid E. Vorobjev , Gregory Belenky
DOI: 10.1063/1.3267103
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摘要: … of 80 ns at T = 77 K was obtained from dependence of the carrier lifetime on excitation … to the minority carrier lifetime. In low-doped materials with background carrier concentrations in …
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