Impact of Be-doping on the material properties of InAs/InAsSb type-II superlattices for infrared detection
作者： Elizabeth H. Steenbergen , Said Elhamri , T. J. Asel , William C. Mitchel , Sarah T. Hierath
DOI: 10.1117/12.2042347
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摘要: The material properties of p-type InAs/InAsSb superlattices are interest for infrared photodiodes, but InAs/InAsSb residually n-type and have not been investigated thus far. This study examines the a mid-wavelength superlattice design doped with Be concentrations from 0.5-7x10 16 cm -3 . High-resolution x-ray diffraction revealed slight structural variation throughout the ~500 nm thick layer, but RMS surface roughness was reasonable. Hall Effect measurements, taken at 10 K to remove any conduction effects undoped GaSb substrate, converting ntype to at Be:3x10 maximum hole mobility achieved two highest Be doping levels was ~24,000 2 /Vs, which is high superlattices. all had photoluminescence (PL) peaks 12 - 34 meV lower in energy than sample, PL peak FWHMs increased as average mismatch increased, expected. Comparing photoresponse allowed the acceptor binding (13 meV) be determined, agreed reported Be acceptor InAs.
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