The Effect of a Si Capping Layer on RF Characteristics of High- $k$ /Metal Gate SiGe Channel pMOSFETs
作者： Min Sang Park , Kyong Taek Lee , Chang Yong Kang , Gil-Bok Choi , Hyun Chul Sagong
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摘要: We present a comparative study of the effects Si capping layer on SiGe channel pMOSFETs used for radio-frequency (RF) applications. In Si-capped devices, drive current increases because Si/SiGe heterojunction layers form quantum well, which reduces carrier scattering. Conversely, samples without suffer severe interface degradation, due to Ge diffusing into gate dielectric. Devices using have enhanced RF performance and reduced low-frequency noise, is key factor affecting phase noise. There an increase in figures merit. These benefits indicate that should be pMOSFETs.
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