Monte Carlo analysis of real‐space transfer in a three‐terminal device
作者： M. B. Patil , U. Ravaioli
DOI: 10.1063/1.352152
关键词: Poisson's equation 、 Schrödinger equation 、 Semiclassical physics 、 Electron density 、 Wave function 、 Computational physics 、 Quantum mechanics 、 Monte Carlo method 、 Electron 、 Chemistry 、 Scattering
摘要: Real‐space transfer (RST) in three‐terminal devices is analyzed detail with a Monte Carlo model including size‐quantization effects. A double heterojunction structure considered In0.25Ga0.75As as the narrow band gap material. Schrodinger’s and Poisson’s equations are solved self‐consistently one dimension to compute subband energies wave functions which then used calculate scattering rates for two‐dimensional electron gas. Electrons injected at end of channel segment probability RST, time required RST etc. calculated. Variation these quantities respect longitudinal transverse electric fields density studied. We point out that this approach more relevant device like real‐space transistor than previous approaches focus on steady‐state velocity‐field characteristics. also compare results semiclassical ignores observe quant...
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