Negative differential resistance through real‐space electron transfer
作者： K. Hess , H. Morkoç , H. Shichijo , B. G. Streetman
DOI: 10.1063/1.91172
关键词: Electron transfer 、 Optoelectronics 、 Performance prediction 、 Mathematical model 、 Thermionic emission 、 Electron mobility 、 Atomic physics 、 Thermal conduction 、 Electrical resistivity and conductivity 、 Chemistry 、 Heterojunction 、 Physics and Astronomy (miscellaneous)
摘要: A new mechanism is proposed to obtain negative differential resistance in layered heterostructures for conduction parallel the interface. The based on hot‐electron thermionic emission from high‐mobility GaAs into low‐mobility AlxGa1−xAs. Preliminary calculations indicate that high peak‐to‐valley ratios can be achieved. transfer speed estimated of order 10−11 s. We further show concept applicable a variety devices.
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