Charge Transfer Devices

摘要: This is a review describing the use of charge transfer devices for digital memory, analog delay, and image sensing. Short descriptions different types charge-coupled MOS bucket-brigade are presented. Those factors such as inefficiency, noise, dark current which affect performance these in above applications discussed. Various possible organizations to serve functions described. Many have been fabricated already indicate high degree achievement. Transfer inefficiencies per range 10−3 10−4 measured. Finally, it projected that will rapidly find their way into certain sensing, applications.