Readout Methods and Readout Circuits for Dynamic Charge-Storage Elements
作者： Karlheinrich Horninger
DOI: 10.1007/978-3-322-83629-8_9
关键词: Binary number 、 Field (physics) 、 Memory cell 、 Electrical engineering 、 Interface (computing) 、 Electronic circuit 、 Charge (physics) 、 Semiconductor 、 Silicon 、 Physics
摘要: Progress in the field of digital semiconductor memories last few years has been characterized by an extremely rapid rise storage density, i.e. number information bits per unit area silicon. Along with progressive technological improvements, key to this turbulent development was principle dynamic charge storage. This involves mobile at Si-SiO2 interface. Depending on whether a small or large charges are stored, binary “1” “O” is present memory cell.
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