Effects of PbO Content on the Dielectric Properties and Energy Storage Performance of (Pb0.97La0.02)(Zr0.97Ti0.03)O3 Antiferroelectric Thin Films

作者: Xihong Hao , Jing Zhou , Shengli An

DOI: 10.1111/J.1551-2916.2011.04460.X

关键词: DielectricMicrostructureThin filmAntiferroelectricityDiffractionAnalytical chemistryPhase (matter)Energy storageMaterials science

摘要: A 400‐nm‐thick (Pb 0.97 La 0.02 )(Zr 0.97 Ti 0.03 )O 3 (PLZT 2/97/3) antiferroelectric (AFE) thin films with different lead excess content (0%, 10%, and 20%) were successfully deposited …

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