作者: Xihong Hao , Jing Zhou , Shengli An
DOI: 10.1111/J.1551-2916.2011.04460.X
关键词: Dielectric 、 Microstructure 、 Thin film 、 Antiferroelectricity 、 Diffraction 、 Analytical chemistry 、 Phase (matter) 、 Energy storage 、 Materials science
摘要: A 400‐nm‐thick (Pb 0.97 La 0.02 )(Zr 0.97 Ti 0.03 )O 3 (PLZT 2/97/3) antiferroelectric (AFE) thin films with different lead excess content (0%, 10%, and 20%) were successfully deposited …