Effect of Nb doping on preferential orientation, phase transformation behavior and electrical properties of PbZrO3 thin films

作者: Mao Ye , Qiu Sun , Xiangqun Chen , Zhaohua Jiang , Fuping Wang

DOI: 10.1016/J.JALLCOM.2012.06.116

关键词:

摘要: Abstract Undoped and Nb-doped (1, 3, 5, 7 9 mol%) PbZrO 3 antiferroelectric thin films were deposited on Pt(1 1 1)/Ti/SiO 2 /Si substrates by using a sol–gel method. All the had perovskite phase structure exhibited distinct preferential orientation, transformation behavior electrical properties, due to effect of Nb doping. On extent dopant, orientation was changed from (1 0 0) (1 1 1) gradually. Meanwhile, with increasing content, gradual change AFE ferroelectric at room temperature observed. Dielectric constant as function content also reported. The dielectric increased up 7 mol% then decreased 9 mol% Nb. loss remained quite low (less than 0.05) in whole frequency or voltage ranges.

参考文章(44)
M. Es-Souni, A. Piorra, C.-H. Solterbeck, S. Iakovlev, M. Abed, Microstructure and properties of solution deposited, Nb-doped PZT thin films Journal of Electroceramics. ,vol. 9, pp. 125- 135 ,(2002) , 10.1023/A:1022806506193
Da-Wei Wang, Mao-Sheng Cao, Jie Yuan, Ran Lu, Hong-Bo Li, Hai-Bo Lin, Quan-Liang Zhao, De-Qing Zhang, Effect of sintering temperature and time on densification, microstructure and properties of the PZT/ZnO nanowhisker piezoelectric composites Journal of Alloys and Compounds. ,vol. 509, pp. 6980- 6986 ,(2011) , 10.1016/J.JALLCOM.2011.03.186
Ebru Mensur Alkoy, Sedat Alkoy, Tadashi Shiosaki, Effects of Ce, Cr and Er Doping and Annealing Conditions on the Microstructural Features and Electrical Properties of PbZrO3 Thin Films Prepared by Sol-Gel Process Japanese Journal of Applied Physics. ,vol. 44, pp. 6654- 6660 ,(2005) , 10.1143/JJAP.44.6654
Wai-Hung Chan, Z. Xu, T. F. Hung, Haydn Chen, Effect of La substitution on phase transitions in lead zirconate stannate titanate (55/35/10) ceramics Journal of Applied Physics. ,vol. 96, pp. 6606- 6610 ,(2004) , 10.1063/1.1805732