作者: Mao Ye , Qiu Sun , Xiangqun Chen , Zhaohua Jiang , Fuping Wang
DOI: 10.1016/J.JALLCOM.2012.06.116
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摘要: Abstract Undoped and Nb-doped (1, 3, 5, 7 9 mol%) PbZrO 3 antiferroelectric thin films were deposited on Pt(1 1 1)/Ti/SiO 2 /Si substrates by using a sol–gel method. All the had perovskite phase structure exhibited distinct preferential orientation, transformation behavior electrical properties, due to effect of Nb doping. On extent dopant, orientation was changed from (1 0 0) (1 1 1) gradually. Meanwhile, with increasing content, gradual change AFE ferroelectric at room temperature observed. Dielectric constant as function content also reported. The dielectric increased up 7 mol% then decreased 9 mol% Nb. loss remained quite low (less than 0.05) in whole frequency or voltage ranges.