PROGRAMMABLE READ-ONLY MEMORY

摘要: PURPOSE:To obtain an easy-to-handle programmable ROM of simple structure by connecting a memory cell consisting serial connection matter p-n junction and insulated film formed doping phosphorus at high concentration having dielectric breakdown below power supply voltage to the intersecting point between word line bit line. CONSTITUTION:When writing is carried out CL21, BL1 raised up (e.g., 5V). At same time, WL2 lowered down VSS 0V). Thus VCC impressed WL2. In this case, strength oxide 6 set such level that generates prescribed V1 lower than in accordance with amount doped thickness. As result, CL21 broken satisfying BL1=VCC WL2=VSS. Then conduct since diode 4 forward. other lines WL0, WL3 BL0 BL2 are VCC/2 respectively, therefore no difference potential exists among these lines. produced non-selection which connected those