ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
作者： Steven T. Harshfield
DOI:
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摘要: A cost-competitive, dense, CMOS compatible ZPROM memory array design and method of manufacture is disclosed. The includes a novel for forming extremely thin diodes strips other materials such as conductors by using oxide spacers an etching mask.
lens.org 参考文章(9)
Amr M. Mohsen, Esmat Z. Hamdy, John L. McCollum, Selectively formable vertical diode circuit element ,(1986)
Bruce B. Roesner, William L. Hays, Reduced-area, read-only memory ,(1984)
Roy R. Shanks, Thin film memory device employing amorphous semiconductor materials ,(1977)
Stanford R Ovshinsky, Wolodymyr Czubatyj, Quiyi Ye, David A Strand, Stephen J Hudgens, None, Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom ,(1994)
P Stern, S Abbas, Electronically rewritable read-only memory using via connections ,(1971)
Douglas C. Galbraith, Abdelshafy A. Eltoukhy, Esmat Z. Hamdy, Steve S. Chiang, Apparatus for improving antifuse programming yield and reducing antifuse programming time ,(1991)
Steven T. Harshfield, Zener programmable read only memory ,(1993)
Kamuro Setsushi, PROGRAMMABLE READ ONLY MEMORY ,(1991)
Nawata Takaharu, Takemae Yoshihiro, PROGRAMMABLE READ-ONLY MEMORY ,(1984)