Buried Bit Line Anti-Fuse One-Time-Programmable Nonvolatile Memory
作者： Hsiang Lan Lung
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摘要: An anti-fuse one-time-programmable (OTP) nonvolatile memory cell has a P well substrate with two P.sup.− doped regions. Another N.sup.+ region, functioning as bit line, is positioned adjacent and between the regions on substrate. defined over region. Two insulator are deposited impurity polysilicon layer anti-fuse. A polycide layer. The function word line. programmed i.e., link, diode, formed after OTP programmed. array structure of cells methods for programming, reading, fabricating such also disclosed.
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