Single-poly eprom and method for forming the same
作者： Chih-Wei Hung , Cheng-Yuan Hsu
DOI:
关键词: Perpendicular 、 Optoelectronics 、 EPROM 、 Gate oxide 、 Layer (electronics) 、 Substrate (electronics) 、 Computer hardware 、 Materials science
摘要: A single-poly EPROM and method for forming the same. The has an isolation region disposed in a substrate to define striped active area. deep n-well is located under gate oxide layer on at pair of selective gates perpendicular area are region. islanded floating area, with gap between gates. p-well below portions sources both sides p-well, connected each other through n-well. drain
lens.org 参考文章(7)
Tomoko Ogura, Seiki Ogura, Process for making and programming and operating a dual-bit multi-level ballistic flash memory ,(2002)
Eliyahou Harari, Jack H. Yuan, George Samachisa, Processing techniques for making a dual floating gate EEPROM cell array ,(1999)
Jacob Haskell, Jack H. Yuan, Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming ,(2004)
Wei-Fan Chen, Shi-Tron Lin, Method for improved programming efficiency in flash memory cells ,(2002)
Yueh Y. Ma, Kuo-Tung Chang, Method of making a self-aligned dual-bit split gate (DSG) flash EEPROM cell ,(1993)
David K. Liu, Ting-Wah Wong, Device with embedded flash and eeprom memories ,(2000)
Osanai Jun, Method for manufacturing a semiconductor device ,(2000)