Antifuse-type one time programming memory cell and array structure with same
作者： Meng-Yi Wu , Wei-Zhe Wong
DOI:
关键词:
摘要: An antifuse-type one time programming memory cell has following structures. A first doped region, a second third region and fourth are formed in well region. gate oxide layer covers surface of the is on spanned over The connected with word line. an antifuse control
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