Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby
作者： Charles Dennison
DOI:
关键词: Electrical engineering 、 Volume (thermodynamics) 、 Dielectric 、 Optoelectronics 、 Electrode material 、 Electrode 、 Phase-change memory 、 Electrical conductor 、 Materials science
摘要: The invention relates to a phase-change memory device. device includes lower electrode disposed in recess of first dielectric. comprises side and second side. communicates volume material. has length that is less than the Additionally, dielectric may overlie electrode. shape substantially similar present also method making providing material recess. removing at least portion
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