Stacked container capacitor using chemical mechanical polishing
作者： Lap Chan , Yeow Meng Teo
DOI:
关键词: Chemical-mechanical planarization 、 Isotropy 、 Layer (electronics) 、 Integrated circuit 、 Materials science 、 Optoelectronics 、 Flange 、 Capacitor 、 Optics 、 Aperture 、 Masking (art)
摘要: A method for forming a stacked container capacitor use within integrated circuits. Formed successively upon semiconductor substrate is first dielectric layer, second layer and patterned mask layer. Within an isotropic etch process, the etches slower than By means of anisotropic process employing as mask, aperture etched at least partially through to yield ledge formed above below masking The then removed. into anisotropically isotropically polysilicon third Finally, filled planarized until there exposed flange ledge.
lens.org 参考文章(11)
Yoshihiro Takaishi, Stacked capacitor type semiconductor memory device with good flatness characteristics ,(1995)
Young J. Lee, Process for fabricating stacked trench capacitors of dynamic ram ,(1990)
Charles H. Dennison, Michael A. Walker, Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing ,(1992)
Charles H. Dennison, Method of producing a self-aligned contact penetrating cell plate ,(1994)
Viju Mathews, Pierre Fazan, Technique to fabricate a container structure with rough inner and outer surfaces ,(1993)
Tadashi C O Patent Division Shibata, Method of manufacturing semiconductor memory device having trench memory capacitor ,(1984)
Taek-Yong Jang, Oh-Hyun Kwon, Kyoung-Seok Oh, Joong-Hyun Shin, Method of fabricating a capacitor for a dynamic random access memory cell ,(1991)
Joseph P. Ellul, John M. Boyd, Michael B. Rowlandson, Method of forming electrodes for trench capacitors ,(1992)