作者: Todd Edgar
DOI:
关键词:
摘要: A semiconductor device and its method of fabrication are provided. The includes a substrate, patterning stop region, an insulating overlayer, container region within the charge storage lamina or conductive layer over interior surface region; contact defined by layer; electrical in wherein respective portions occupy collectively substantially all region. bit line terminal is coupled to through switching structure. According one embodiment present invention, central pair lateral regions provided such that defines cross section having upper portion lower portion, positioned between regions, wider than portion.