Method of making stacked capacitor dram cell
作者： Dae-Je Chin , Tae-Young Chung
DOI:
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摘要: A saddled and wrapped stack capacitor DRAM a method thereof are provided. The of the invention includes three foactors in increasing effective areas for capacitor. One is storage poly layer comprising first second layer, which formed thick region over field oxide through two steps; another spacer an etchback technique coated on being patterned to selectively remove makes be remained maximize or proper by controlling size thereof; undercut boundary regions upper plate material wraps.
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