Method of making a semiconductor memory circuit device
作者： Masaki Nagao , Yoshiyuki Kaneko , Kozo Watanabe , Hiroyuki Miyazawa , Hiroyuki Uchiyama
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摘要: In a semiconductor memory circuit device wherein each cell is constituted by series of selecting MISFET and an information storing capacitor stacked structure, there are present in first region as array having gate electrode source drain regions; second capacity electrodes dielectric film extending onto insulating on the electrode; positioned wiring film, while peripheral third film; film.
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