Manufacture of semiconductor memory

摘要: PURPOSE:To obtain a memory with small cell size by forming cacpaity increasing P-N junction through selfmatching. CONSTITUTION:A field oxide film 11 and an SiO2 12 for capacity are formed on the surface of P type Si substrate poly-Si 13A is stacked thereon CVD method. B As ions injected at high density in order mention into Si3B4 mask 14 arranged, - layer 13 N -layer 16 heat-treatment. The grain expansion previously doping advantageous if any. Next, 17A 13A, removed etching so that electrode formed. An 17 gate 12' made making oxidation again, 18 -layers 19 20 Thereby, adjustment becomes unnecessary, process simplified, allowance unnecessary reduced.