Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone
作者： Ho Keun Kim , Dong Young Jang , Jun Woo Kim , Kiho Bae , Joon Hyung Shim
DOI: 10.1016/J.TSF.2015.05.063
关键词: Chemical binding 、 Materials science 、 Yttria-stabilized zirconia 、 Ionic conductivity 、 X-ray photoelectron spectroscopy 、 Atomic layer deposition 、 Thin film 、 Cubic zirconia 、 Chemical engineering 、 Inorganic chemistry 、 Conductivity
摘要: Abstract We compared the ionic properties of yttria-stabilized zirconia (YSZ) thin films prepared by atomic layer deposition (ALD) using various oxidants including water, oxygen, and ozone. Cross-plane conductivity measurements were performed at low temperature (50 °C) high (450 °C) AC impedance spectroscopy. As a result, we have confirmed that ALD YSZ below 300 °C is greater several orders magnitude to nano-scale synthesized other conventional techniques. Among samples, fabricated water showed highest while ozone lowest. analyzed this result in relation with grain morphology characterized X-ray diffraction (XRD) force microscopy (AFM), chemical binding states measured photoelectron spectroscopy (XPS).
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