Influence of the bilayer thickness on the optical properties of Al2O3-Y2O3 dielectric nanolaminate films grown by thermal atomic layer deposition

作者: J López , A Sotelo , FF Castillón , R Machorro , N Nedev

DOI: 10.1016/J.MATERRESBULL.2016.11.008

关键词: Materials scienceWavelengthBand gapRefractive indexOpticsBilayerThin filmAtomic layer depositionDielectricOptoelectronicsNanostructure

摘要: Abstract This work focuses on the study of optical properties nanolaminate films Al2O3-Y2O3 bilayers. Nanolaminates were grown by means thermal atomic layer deposition (ALD). The multilayer thickness, refractive index and bandgap studied via spectroscopic ellipsometry. Ellipsometric data revealed an increase from 1.9 to 2.2 at 190 nm wavelength when bilayer thickness varies between 4 10 nm. These results demonstrate that can be modulated varying thickness. Optical values, obtained Wemple DiDomenico model, indicate decrease leads (ΔEg = 0.8 eV), as well Eg modulation a function show this material could exploited for designing multilayered coatings suitable nanoscale optoelectronic devices.

参考文章(47)
Ho Keun Kim, Dong Young Jang, Jun Woo Kim, Kiho Bae, Joon Hyung Shim, Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone Thin Solid Films. ,vol. 589, pp. 441- 445 ,(2015) , 10.1016/J.TSF.2015.05.063
Corina Barbos, Danièle Blanc-Pelissier, Alain Fave, Elisabeth Blanquet, Alexandre Crisci, Erwann Fourmond, David Albertini, Andreï Sabac, Khaled Ayadi, Philippe Girard, Mustapha Lemiti, Characterization of Al2O3 Thin Films Prepared by Thermal ALD Energy Procedia. ,vol. 77, pp. 558- 564 ,(2015) , 10.1016/J.EGYPRO.2015.07.080
NV Edwards, None, Status and Prospects For VUV Ellipsometry (Applied to High K and Low K Materials) AIP Conference Proceedings. ,vol. 683, pp. 723- 737 ,(2003) , 10.1063/1.1622551
Pradeep Kumar, Monika K Wiedmann, Charles H Winter, Ivan Avrutsky, None, Optical properties of Al2O3 thin films grown by atomic layer deposition. Applied Optics. ,vol. 48, pp. 5407- 5412 ,(2009) , 10.1364/AO.48.005407
Chao-Hsin Chien, Guang-Li Luo, Jun-Cheng Liu, Chi-Chung Kei, Da-Ren Liu, Chien-Nan Hsiao, Chun-Hui Yang, Chun-Yen Chang, Chao-Ching Cheng, Characteristics of Atomic-Layer-Deposited Al2O3 High-k Dielectric Films Grown on Ge Substrates Journal of The Electrochemical Society. ,vol. 155, ,(2008) , 10.1149/1.2965495
Ji-Zhou Kong, Mo-Yun Gao, Hai-Fa Zhai, Qing-Yu Yan, Ai-Dong Li, Hui Li, Di Wu, Fabrication and magnetic properties of FePt/Al2O3 composite film by atomic-layer-deposition Journal of Magnetism and Magnetic Materials. ,vol. 343, pp. 1- 5 ,(2013) , 10.1016/J.JMMM.2013.04.047
G. Y. Cho, S. Noh, Y. H. Lee, S. Ji, S. W. Cha, Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition Meeting Abstracts. ,vol. 64, pp. 15- 21 ,(2014) , 10.1149/06409.0015ECST
Sylwia Gieraltowska, Lukasz Wachnicki, Bartlomiej S. Witkowski, Robert Mroczynski, Piotr Dluzewski, Marek Godlewski, Characterization of dielectric layers grown at low temperature by atomic layer deposition Thin Solid Films. ,vol. 577, pp. 97- 102 ,(2015) , 10.1016/J.TSF.2015.01.059
Jun Yeol Paek, Ikwhang Chang, Joon Ho Park, Sanghoon Ji, Suk Won Cha, A study on properties of yttrium-stabilized zirconia thin films fabricated by different deposition techniques Renewable Energy. ,vol. 65, pp. 202- 206 ,(2014) , 10.1016/J.RENENE.2013.08.043
N.M. Ravindra, Preethi Ganapathy, Jinsoo Choi, Energy gap refractive index relations in semiconductors An overview Infrared Physics & Technology. ,vol. 50, pp. 21- 29 ,(2007) , 10.1016/J.INFRARED.2006.04.001