A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded n-MOSFETs
作者： D.S. Ang , C.H. Ling
DOI: 10.1109/55.650342
关键词: Capacitance 、 State (functional analysis) 、 Charge pumping 、 Oxide 、 Materials science 、 Analytical chemistry 、 Stress (mechanics) 、 Hot holes 、 Molecular physics 、 MOSFET 、 Annihilation
摘要: A new experimental technique, based on gate-to-drain capacitance C/sub gd//sup s/ and charge pumping (CP) current, is proposed for the lateral profiting of oxide interface state charges in LDD region n-MOSFETs. The device injected with hot holes, which are subsequently removed by a low-level channel hot-electron stress. degree neutralization monitored until complete annihilation trapped holes realized. This allows effects CP characteristics to be clearly distinguished, spatial profiles two separately determined.
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