A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique
作者： S. Mahapatra , C.D. Parikh , V. Ramgopal Rao , C.R. Viswanathan , J. Vasi
DOI: 10.1109/16.817583
关键词:
摘要: A novel simulation-independent charge pumping (CP) technique is employed to accurately determine the spatial distributions of interface (N/sub it/) and oxide 0t/) traps in hot-carrier stressed MOSFETs. Direct separation N/sub it/ 0t/ achieved without using simulation, iteration, or neutralization. Better immunity from measurement noise by avoiding numerical differentiation data. The study temporal buildup damage profiles for a variety stress conditions. nature generated trends its position are qualitatively estimated internal electric field obtained device simulations. related drain current degradation well-defined observed with variations biases time. Results presented which provide fresh insight into mechanisms.
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