Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm
作者： W. K. Chim , S. E. Leang , D. S. H. Chan
DOI: 10.1063/1.364055
关键词:
摘要: In this article, a new charge-extraction algorithm is proposed for extracting the spatial distributions of hot-carrier-induced interface states and trapped charges in p- n- metal-oxide-semiconductor field-effect transistors, based on charge-pumping measurement data. This extraction physics provides better understanding how presence affect curves. The time very fast (typically 30 s) does not require tedious computer simulation. verification method was performed using TSUPREM-4 MEDICI simulations. With method, one can gain insight into degradation mechanisms taking place under different hot-carrier stressing conditions.
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