Nanoindentation of silicon and structural transformation: Three-dimensional contact theory
作者： M. Hebbache , M. Zemzemi
DOI: 10.1103/PHYSREVB.67.233302
关键词: Anisotropy 、 Indentation 、 Condensed matter physics 、 Optics 、 Nanoindentation 、 Diamond 、 Materials science 、 Contact mechanics 、 Tetragonal crystal system 、 Phase transition 、 Phase diagram
摘要: Our previous analysis of the stress-pressure phase diagram silicon [Hebbache, Mattesini, and Szeftel, Phys. Rev. B $63,$ 205201 (2001)] is extended to study diamond \ensuremath{\beta}-Sn transition that occurs in this material during indentation experiments. We combined elastic theory transitions three-dimensional Hertzian contact anisotropic materials. The stress dependence harmonic coefficients, usually omitted theories, taken into account explicitly. calculated second-order constants stressed cubic phases are given. shear hydrostatic components pressure beneath indenter calculated. Comparison with experimental results Williams et al. made. spatial variations spontaneous tetragonal strain distorts Si extension shown.
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