Be diffusion in GaN
作者： S.J. Chang , W.C. Lai , J.F. Chen , S.C. Chen , B.R. Huang
DOI: 10.1016/S1044-5803(03)00012-3
关键词: Materials science 、 Blueshift 、 Pl spectra 、 Diffusion 、 Photoluminescence 、 Beryllium 、 Analytical chemistry 、 Spectral line
摘要: Beryllium (Be)-diffused GaN samples have been successfully fabricated by depositing Ni/AuBe onto p-GaN and subsequent thermal annealing. It was found that Be atoms can diffuse much faster than Ni atoms. The diffusion length is about 0.5 μm for a sample thermally annealed 5 min at 650 °C. also although the room temperature photoluminescence (PL) spectra are same Be-diffused different temperatures, low-temperature PL significantly temperatures. For °C, large blue shift observed when measurement decreased from to 10 K.
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