Planar Hall effect in the type-II Dirac semimetal VAl 3

作者: Ratnadwip Singha , Shubhankar Roy , Arnab Pariari , Biswarup Satpati , Prabhat Mandal

DOI: 10.1103/PHYSREVB.98.081103

关键词: MagnetoresistanceDirac (software)PhysicsCondensed matter physicsSemimetalDirac fermionBerry connection and curvatureChiral anomalyElectronic band structureFermion

摘要: The study of electronic properties in topological systems is one the most fascinating topics condensed-matter physics, which has generated enormous interests recent times. New materials are frequently being proposed and investigated to identify their nontrivial band structure. While sophisticated techniques such as angle-resolved photoemission spectroscopy have become popular map energy-momentum relation, transport experiments lack any direct confirmation Dirac Weyl fermions a system. From band-structure calculations, ${\mathrm{VAl}}_{3}$ been be type-II semimetal. This material represents large family isostructural compounds, all having similar structure an ideal system explore rich physics Lorentz symmetry violating fermions. In this work, we present detailed analysis on magnetotransport ${\mathrm{VAl}}_{3}$. A large, nonsaturating magnetoresistance observed. Hall resistivity reveals presence two types charge carriers with high mobility. Our measurements show planar effect material, robust can easily detectable up temperature. phenomenon originates from relativistic chiral anomaly Berry curvature, validates theoretical prediction semimetal phase

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