Thickness Scaling of Pb(Zr,Ti)O 3 Thin Films and Pt Electrodes for High Density FeRAM Devices

摘要: This article describes the scaling and performance issues for future high density ferroelectric non-volatile memories (FeRAM) using sub-100 nm Pb(Zr,Ti)O 3 thin films by chemical deposition process ultra electrode stack. Two separate approaches are discussed. The first approach involves scalability of It is observed that crystallization behavior PZT were improved with increasing Pt thickness. However, till showed even on 30 nm-thick electrodes. second presents thickness scaled (∼50 nm) switching these below 1 V operation polarization value (> w C/cm 2 ), implying possibility to realize 32Mb FRAM devices beyond.