Effects of thermal treatment on structural and electrical properties of sputtered Ir–W alloy thin films
作者： Yoshio Abe , Eiji Watanabe , Katsutaka Sasaki , Shigemi Iura
DOI: 10.1016/J.SURFCOAT.2004.10.037
关键词:
摘要: Abstract Thermally and chemically stable electrode films are required for capacitor electrodes of semiconductor memories, such as dynamic random access memories (DRAMs) ferroelectric (FeRAMs). In this study, iridium–tungsten (Ir–W) alloy thin were prepared on SiO 2 /Si substrates by RF magnetron sputtering, the effects thermal treatment in oxygen atmosphere structural electrical properties studied. The surface as-deposited Ir–W was very smooth showed low resistivities below 120 μΩ cm. resistances morphology (approximately 20 at.%) remained after up to 600 °C oxygen, which indicates high stability films.
elsevier.com
sci-hub.se 参考文章(12)
Seung-Hyun Kim, C. Y. Koo, S-M. Ha, H-J. Woo, D-Y. Park, J. E. Lim, C. S. Hwang, J. Ha, Thickness Scaling of Pb(Zr,Ti)O 3 Thin Films and Pt Electrodes for High Density FeRAM Devices Integrated Ferroelectrics. ,vol. 48, pp. 139- 147 ,(2002) , 10.1080/713718318
Fengyan Zhang, Jer-shen Maa, Sheng Teng Hsu, Shigeo Ohnishi, Wendong Zhen, Studies of Ir-Ta-O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi2Ta2O9 Thin Film Deposition Japanese Journal of Applied Physics. ,vol. 38, pp. L1447- L1449 ,(1999) , 10.1143/JJAP.38.L1447
E. Watanabe, Y. Abe, K. Sasaki, S. Iura, Characterization of thermally stable Ir–Ta alloy thin films deposited by sputtering Vacuum. ,vol. 74, pp. 735- 739 ,(2004) , 10.1016/J.VACUUM.2004.01.058
G. J. van der Kolk, Crystallization temperatures of 5d--5d alloys Journal of Materials Research. ,vol. 3, pp. 209- 211 ,(1988) , 10.1557/JMR.1988.0209
A. W. Denier van der Gon, J. C. Barbour, R. de Reus, F. W. Saris, Thermal stability of thin‐film amorphous W‐Ru, W‐Re, and Ta‐Ir alloys Journal of Applied Physics. ,vol. 61, pp. 1212- 1215 ,(1987) , 10.1063/1.338171
Yoon J. Song, H. H. Kim, Sung Y. Lee, D. J. Jung, B. J. Koo, J. K. Lee, Y. S. Park, H. J. Cho, S. O. Park, Kinam Kim, Integration and electrical properties of diffusion barrier for high density ferroelectric memory Applied Physics Letters. ,vol. 76, pp. 451- 453 ,(2000) , 10.1063/1.125784
R.H. Horng, D.S. Wuu, L.H. Wu, S.C. Wei, S.H. Chan, C.C. Leu, T.Y. Huang, S.M. Sze, M.K. Lee, Co-sputtered Ru-Ti alloy electrodes for DRAM applications Thin Solid Films. pp. 598- 601 ,(1999) , 10.1016/S0040-6090(98)01699-X
D.K. Wickenden, M.J. Sisson, A.G. Todd, M.J. Kelly, Amorphous metal-semiconductor contacts for high temperature electronics—II Thermal stability of Schottky barrier characteristics Solid-state Electronics. ,vol. 27, pp. 515- 518 ,(1984) , 10.1016/0038-1101(84)90180-1
M. M. Collver, R. H. Hammond, Stability of amorphous transition‐metal films Journal of Applied Physics. ,vol. 49, pp. 2420- 2422 ,(1978) , 10.1063/1.325083
Koichi Takemura, Shintaro Yamamichi, Pierre-Yves Lesaicherre, Ken Tokashiki, Hidenobu Miyamoto, Haruhiko Ono, Yoichi Miyasaka, Masaji Yoshida, RuO2/TiN-Based Storage Electrodes for (Ba, Sr)TiO3 Dynamic Random Access Memory Capacitors Japanese Journal of Applied Physics. ,vol. 34, pp. 5224- 5229 ,(1995) , 10.1143/JJAP.34.5224