Integration and electrical properties of diffusion barrier for high density ferroelectric memory
作者： Yoon J. Song , H. H. Kim , Sung Y. Lee , D. J. Jung , B. J. Koo
DOI: 10.1063/1.125784
关键词: Substrate (electronics) 、 Diffusion barrier 、 Diffusion 、 Transmission electron microscopy 、 Optoelectronics 、 Layer (electronics) 、 Ohmic contact 、 Polarization (electrochemistry) 、 Ferroelectricity 、 Materials science
摘要: A reliable Ir diffusion barrier was prepared on polysilicon plugged substrate with a contact size of 0.6 μm. Using Ti adhesion layer and stress-relief process, it possible to integrate the into high density 4 Mb ferroelectric random access memory device. After heat treating sol-gel derived Pb(Zr1−xTix)O3 (PZT) films at 700 °C, displayed an ohmic behavior showed low resistance 130 Ω per in 1k serial array. The PZT Pt/IrO2/Ir poly-plugged exhibited excellent properties such as remnant polarization coercive voltage 25 μC/cm2 1.15 V, respectively. Auger depth profile transmission electron microscopy analyses confirmed that no appreciable oxidation formed between plug.
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