Amorphous metal-semiconductor contacts for high temperature electronics—II Thermal stability of Schottky barrier characteristics
作者： D.K. Wickenden , M.J. Sisson , A.G. Todd , M.J. Kelly
DOI: 10.1016/0038-1101(84)90180-1
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摘要: Abstract We report results on the thermal stability of Schottky barrier formed by each two amorphous metal alloys (from NiNb and TaIr systems) Si GaAs. have found height to be stable within 0.05 eV after treatment for 2.5 hr at 500°C in case TaIr/n/n+ GaAs, 0.06 40 350°C Si.
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