Deposition of Er3+ doped chalcogenide glass films by excimer laser ablation
作者： E.N. Borisov , V.B. Smirnov , A. Tverjanovich , Yu.S. Tveryanovich
DOI: 10.1016/S0022-3093(03)00421-6
关键词: Laser ablation 、 Spectroscopy 、 Pulsed laser deposition 、 Thin film 、 Materials science 、 Luminescence 、 Analytical chemistry 、 Photoluminescence 、 Chalcogenide glass 、 Absorption spectroscopy
摘要: Abstract The Ga2S3–GeS2:Er2S3 films of various thicknesses (from 0.3 to 5 μm) were prepared by laser ablation. deposed characterized with diagnostic techniques: optical absorption spectroscopy, X-ray fluorescence secondary ion mass spectroscopy and luminescence spectroscopy. Concentrations rare-earth ions, gallium germanium in the target bulk glass similar. composition deposited was uniform. location fundamental edge range from about 350 550 nm depended on deposition conditions. UV irradiation led a large photo bleaching effect. spectrum film measured.
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Valentina F. Kokorina, Glasses for Infrared Optics ,(1996)
E. Márquez, A.M. Bernal-Oliva, J.M. González-Leal, R. Prieto-Alcón, R. Jiménez-Garay, On the irreversible photo-bleaching phenomenon in obliquely-evaporated GeS2 glass films Journal of Non-crystalline Solids. ,vol. 222, pp. 250- 257 ,(1997) , 10.1016/S0022-3093(97)90121-6
P Němec, M Frumar, B Frumarová, M Jelı́nek, J Lančok, J Jedelský, Pulsed laser deposition of pure and praseodymium-doped Ge–Ga–Se amorphous chalcogenide films Optical Materials. ,vol. 15, pp. 191- 197 ,(2000) , 10.1016/S0925-3467(00)00035-5
Devinder S. Gill, Robert W. Eason, Carlos Zaldo, Harvey N. Rutt, Nikolaos A. Vainos, Characterisation of GaLaS chalcogenide glass thin-film optical waveguides, fabricated by pulsed laser deposition Journal of Non-Crystalline Solids. ,vol. 191, pp. 321- 326 ,(1995) , 10.1016/0022-3093(95)00319-3
S.H Messaddeq, M Siu Li, D Lezal, S.J.L Ribeiro, Y Messaddeq, Above bandgap induced photoexpansion and photobleaching in Ga-Ge-S based glasses Journal of Non-crystalline Solids. ,vol. 284, pp. 282- 287 ,(2001) , 10.1016/S0022-3093(01)00415-X