Above bandgap induced photoexpansion and photobleaching in Ga-Ge-S based glasses

摘要: Abstract Photoexpansion and photobleaching effects have been examined in glass compositions Ga10Ge25S65 Ga5Ge25As5S65. Such are promising for optical storage planar waveguide applications. To evaluate the photoinduced effect, samples were exposed to 351 nm light, varying power density (3–10 W / cm 2 ) exposure time (0–120 min). The areas analyzed using atomic force microscopy (AFM) an expansion of 800 is observed composition during 120 min 5 density. absorption edge measured by a spectrophotometer indicates blue shift (80 nm) after illumination Ga10Ge25S65. morphology was scanning electron (SEM). chemical energy dispersive analyzer (EDX) indicate increase number sulfur atoms irradiated area.